ROHM has developed the BD2311NVX gate driver IC, optimised for GaN devices it achieves gate drive speeds on the order of nanoseconds (ns) - ideal for high-speed GaN switching. This device was developed by ROHM and facilitated through their deep understanding of GaN technology and continuing pursuit of improved gate driver performance. The result is a fast-switching gate driver featuring an operating voltage range of 4.5V to 5.5V and typical rise and fall times of 0.65ns and 0.70ns respectively, combined with a minimum gate input pulse width of 1.25ns that helps contributes to smaller, more energy efficient, higher performance applications.
In recent years, improving power conversion efficiency while reducing the size of power supply units in server systems have become important factors as the number of IoT devices continues to grow. This requires further advancements in the power device sector. At the same time, LiDAR, which is used not only for autonomous driving but also for monitoring industrial equipment and social infrastructure, demands high-speed pulsed laser light to further increase recognition accuracy.
Typical Application Circuit
As these applications require the use of high-speed switching devices, in conjunction with the release of GaN devices, ROHM has developed the BD2311NVX ultra-high-speed gate driver IC that maximizes GaN performance. ROHM continues to innovate and release smaller products to support greater miniaturization.
As GaN devices are sensitive towards gate input overvoltage, ROHM has developed a unique method to suppress the gate voltage overshoots and has implemented it into the BD2311NVX driver. On top, the optimum GaN device can be selected by adjusting the gate resistance based on application requirements.
Minimum Gate Input Pulse Width Characteristics BD2311NVX-LB
ROHM also offers a lineup of GaN devices under the EcoGaN™ name - contributing to a sustainable society through power solutions when combined with gate driver ICs that maximize their performance. The gate driver BD2311NVX with the unique gate overvoltage suppression feature - when used with ROHM's EcoGaN™ products - further simplifies the design and enhances application reliability.
Gate Voltage Waveform Comparison (Gate resistance: 0 Ohm)
ROHM’s lineup of EcoGaN™ GaN devices contribute to energy conservation and miniaturization by maximizing GaN characteristics to achieve lower application power consumption, smaller peripheral components, and simpler designs requiring fewer parts. EcoGaN™ is a trademark or registered trademark of ROHM Co., Ltd.
Reference Designs
The range of uses for LiDAR sensors is expanding to include not only autonomous driving, but also applications in the industrial and infrastructure fields. LiDAR sensors are required to have longer sensing distance and higher resolution, and in addition to improving the characteristics of the laser diode, it is necessary to drive the laser diode at higher speeds and power. ROHM offers a lineup of 905nm high power narrow emission width laser diodes. (RLD90QZWx Series).
ROHM have also developed 2 reference design boards, REFLD002-1 square wave circuit and REFLD002-2 resonant circuit, for LiDAR applications based on the BD2311NVX ultra-high-speed GaN gate driver together with ROHM’s 150V EcoGaN™ device and high-power laser diodes, these reference designs allow developers to quickly evaluate the performance of the BD2311NVX reducing time to market.
The BD2311NVX ultra-high-speed GaN gate driver is suitable for a range of applications including LiDAR drive circuits (i.e. industrial equipment, infrastructure monitoring), DC-DC converter circuits in data centres, base stations etc., Wireless charging for portable devices and Class-D audio Amplifiers and many more besides.
Anglia are offering customers a FREE reference design board and samples of the BD2311NVX ultra-high-speed GaN gate driver from ROHM, please fill in the form below to register your interest now.
Free samples are subject to availability.
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