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ROHM expand SiC MOSFET range with addition of 3rd Generation devices with 35% lower switching losses, samples available from Anglia

Date Published : 11/05/2021 Share with:

As one of the global leaders in Silicon Carbide process technology, ROHM are continually expanding their range of SiC MOSFETs. These devices are driving the move towards greater energy efficiency and power handling demanded by applications such as Electric Vehicle Charging, Data Centres, Energy harvesting and Power Conversion.

SiC MOSFETs eliminate tail current during switching, resulting in faster operation, reduced switching loss, and increased stabilization. Their lower ON resistance and a compact chip size result in reduced capacitance and gate charge, in addition, SiC exhibits superior material properties, such as minimal ON-resistance increases, and enables greater package miniaturization and energy savings than traditional silicon (Si) devices, in which the ON resistance can more than double with increased temperature.

Switching Loss Comparison of SiC MOSFET

ROHM have recently introduced the SCT Series of 3rd-generation trench-gate type SiC MOSFETs, these devices are available in 6 variants and feature approximately 50% lower ON-resistance than the 2nd-generation planar types, making them ideal for large server power supplies, UPS systems, solar power converters, and electric vehicle charging stations requiring high efficiency. The SCT Series are available in 650V and 1200V with drain current ratings from 24A to 70A and ON-resistances as low as 30mOhm depending on the device selected.

The SCT3 series is offered in a 4-pin package (TO-247-4L) that maximizes switching performance, this packaging reduces switching loss by up to 35% over conventional 3-pin package types, contributing to lower power consumption in a variety of applications. With conventional 3-pin packages (TO-247N), the effective gate voltage at the chip reduces due to the voltage dropped across the parasitic inductance of the source terminal. This causes the switching speed to reduce. Adopting the 4-pin TO-247-4L package separates the driver and power source pins, minimizing the effects of the parasitic inductance component. This makes it possible to maximize the switching speed of SiC MOSFETs, reducing total switching loss (turn ON and turn OFF) by up to 35% over conventional package.

Structural Comparison in SiC MOSFET

Click below to see a brief overview showing the benefits offer by the 4-pin TO-247-4L package

In addition, unlike conventional 3-pin package SiC MOSFETs in which the gate voltage drops due to the inductance component of the source terminal, causing the switching speed to be delayed, this new 4-pin package incorporates a source terminal for the gate driver separate from the conventional source terminal that minimizes this reduction in gate voltage, making it possible to maximize switching performance.

High-speed switching reduces loss

The SCT3 Series is rated for operation at a maximum Junction Temperature (Tj) of 175°C and are supplied in tube packaging.

Key Features

 

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • RoHS compliant

 

Click here for more information or to buy from Anglia Live.

Click here to download ROHM’s white paper on SiC packaging developments

 

Anglia are offering customers FREE samples of the SCT Series 3rd Generation SiC MOSFETs from ROHM, please fill in the form below to register for your FREE samples now.

 

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FREE samples for UK and Ireland customers only, subject to availability.

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