We use cookies to ensure that we can provide you with the best experience on our website. By using our website, you are consenting to the use of cookies as set out in our policy. OK
Show Prices Inc VAT
Help
  • Sign up for our Newsletter

Introducing Silicon Carbide (SiC) MOSFETs from ROHM Semiconductor

Date Published : 16/07/2019 Share with:

In recent years Silicon Carbide (SiC) has emerged as one of the most viable candidates in the search for a next-generation, low-loss power semiconductor element due to its low ON resistance and superior high temperature, high frequency, and high voltage performance when compared to silicon.

SiC (silicon carbide) is a compound semiconductor composed of silicon and carbide. SiC provides a number of advantages over silicon, including 10x the breakdown electric field strength, 3x the band gap, and enabling a wider range of p- and n-type control required for device construction. The result is breakthrough performance, not possible with silicon, making it the most viable successor for next-generation power devices.

Click here to download the ROHM SiC Device application note

 

ROHM has been at the forefront in the development of SiC power devices and modules, improving power savings in a number of applications including:

  • High-efficiency inverters in DC/AC converters for solar/wind power supplies
  • Electric/hybrid vehicles power conversion
  • Power inverters for industrial equipment and air conditioners
  • X-ray generators
  • Thin-film coating processes

 

ROHM's Development History of SiC Power Devices

The ROHM portfolio of devices include SiC Schottky barrier diodes (SBD's), SiC MOSFET's, full SiC power modules (which integrate SiC SBDs and MOSFETs), and high heat resistance power modules. These compact and efficient semiconductor devices have the potential to substantially reduce end-product size.

Click below to see how ROHM SiC MOSFETS can be used in Ultra-High Voltage Pulse generators




For SiC MOSFET devices in principle there is no tail current during switching, this results in faster operation and reduced switching losses. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. SiC devices exhibit minimal ON resistance increases and provides greater package miniaturization, and energy savings than conventional Si devices, in which the ON resistance can more than double with increased temperature.

The ROHM SCT series of SiC MOSFET devices are currently available in 650V, 1200V and 1700V Drain-source voltages with Drain currents from 3.7A to 118A and power ratings up to 427W in a TO-247N package, the family also includes devices which meet AEC-Q101 Automotive Grade.

Click here for more information or to buy from Anglia Live.

Click here to download the catalogue for ROHM SiC Power Devices

Anglia are offering customers FREE samples of the SCT series of Silicon Carbide (SiC) MOSFETs from ROHM, please fill in the form below to register for your FREE samples now.
 

Requesting....

 

To register for FREE samples of the SCT series of Silicon Carbide (SiC) MOSFETs from ROHM, please fill in the form below

First name *
Last name *
Company *
Telephone *
Email Address *
Project Name
Project Volume  *
Project Description

Interested in more FREE samples for your design? Click here to try our Ezysample service.

FREE samples for UK and Ireland customers only, subject to availability.

 

 

You may also be interested in

ROHM Introduce Ultra-High-Efficiency 76V DC/DC Buck Converter

ROHM has launched a 12 to 76V input, 3A variable output voltage, DC/DC Buck converter with integrated 76V MOSFET optimized for high power (high voltage x large current) applications such as motors, factory automation equipment, communications


ROHM introduces the world's smallest reflector-type high brightness 3-colour LED, samples available now from Anglia

ROHM has recently announced the availability of an ultra-compact reflector-type LED optimized for consumer devices such as matrix light sources for gaming and wearables that demand increased miniaturization.


ROHM introduces the world's smallest reflector-type high brightness 3-colour LED, samples available now from Anglia

ROHM has recently announced the availability of an ultra-compact reflector-type LED optimized for consumer devices such as matrix light sources for gaming and wearables that demand increased miniaturization.


ROHM expands its full SiC Power Module lineup with new 1200V/300A model ideal for high power applications

ROHM has recently announced the development of a 1200V/300A full SiC power module designed for inverters and converters in solar power conditioners and industrial equipment.


ROHM expands its full SiC Power Module lineup with new 1200V/300A model ideal for high power applications

ROHM has recently announced the development of a 1200V/300A full SiC power module designed for inverters and converters in solar power conditioners and industrial equipment.


Contact & Support

Customer Services & UK Sales:
+44 (0)1945 47 47 47
Contact Us

Follow us:


Accepted Credit Cards
Maximum card transaction £2000 transaction £2000
*UK & Eire only. Orders of £30 and below excluding VAT will be levied a handling charge of £4.95 + VAT. Customers will be contacted prior to despatch if exceptional circumstances affect the cost of delivery.
© 2020 Anglia Components Ltd. All rights reservedTerms & ConditionsTerms of UsePrivacy PolicyAnti Bribery Statement