ROHM has recently announced the development of the RBE series of compact Schottky barrier diodes featuring the lowest VF in the industry, making it ideal for portable applications requiring greater space savings. Available in a range of packages, including the new ultra-compact VML2 measuring just 1.0 x 0.6mm optimised for high-density applications.
The growing trend towards greater functionality and sophistication in mobile devices while reducing size and maintaining or even prolonging battery life has led to a greater demand for ultra-compact components that minimise power consumption, in particular Schottky barrier diodes used in power supplies, where low VF and high average rectified current are required. However, up to now in order to reduce VF and increase current handling capability it has been necessary to increase chip size, making miniaturisation difficult.
In response, ROHM significantly improved current efficiency by redesigning the diode element, decreasing VF by 32% over conventional products. This results in lower heat generation and higher rated current, enabling smaller packages to be used, which can reduce mounting area by up to 80%.
1. High current in a compact package Industry-low VF ensures high current handling capability in a compact form factor.
2. Reduced mounting area by up to 80% Higher rated current makes it possible to use smaller packages, reducing mounting area considerably.
Application Diagram: Smartphone Circuit
Specifications
As one of the global leaders in Silicon Carbide process technology, ROHM are continually expanding their range of SiC MOSFETs. These devices are driving the move towards greater energy efficiency and power handling demanded by applications.
As one of the global leaders in Silicon Carbide process technology, ROHM are continually expanding their range of SiC MOSFETs. These devices are driving the move towards greater energy efficiency and power handling demanded by applications
In recent years Silicon Carbide (SiC) has emerged as one of the most viable candidates in the search for a next-generation, low-loss power semiconductor element due to its low ON resistance and superior high temperature, high frequency.
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