Comprising of low, mid and high voltage versions, Taiwan Semiconductor’s various portfolios of N-channel Power MOSFETs deliver higher performance and improved efficiency.
HV Power MOSFETs: BVDS 450V~900V N-Channel Features & Benefits Taiwan Semiconductor’s HV Power MOSFET portfolio provides Low On-Resistance performance, low conduction losses and improved efficiency. Good di/dt rating allows excellent reliability and ensures avalanche ruggedness. The lower switching losses due to lower effective output capacitance allow high frequency in a switching application.
MV Power MOSFETs: BVDS 60V~200V N-Channel LV Power MOSFETs: BVDS <60V Features & Benefits Taiwan Semiconductor’s Mid-Voltage and Low Voltage Power MOSFET portfolios are designed using advanced trench technology. Designed specifically to improve the efficiency of DC-DC converters and reduce switching losses by improved low gate charge, this high performance trench technology delivers extremely low RDS(on) and low gate charge performance that create extremely versatile devices and applications.