ROHM has recently announced the industry’s first mass production of SiC power modules (1200V/100A rated) entirely consisting of SiC power elements and enabling high frequency operation above 100kHz. Thus, the company is now able to offer industry-leading SiC devices such as Schottky barrier diodes (SBD) and MOSFETs as well as a complete SiC module solution.
Due to the expertise of SiCrystal AG which is part of the corporate group, ROHM possesses total manufacturing capability for SiC semiconductors from ingot formation to power device fabrication. This allows the rapid development of advanced products and complete control of raw materials for unmatched reliability and quality.
SiC Schottky Barrier Diodes (SBDs) ROHM's SCS series of high-performance SiC Schottky diodes (SBDs) are a new class of silicon carbide diodes offering leading low forward voltage and fast recovery time leading to improved power conversion efficiency. Unlike Si-based fast recovery diodes where the trr increases along with temperature, SiC devices maintain constant characteristics over a wide operating temperature range, resulting in better performance under actual operating conditions. For example, the 10 A rated part has a VF of 1.5 V at 25°C and 1.6 V at 150°C. Low VF reduces conduction loss while the ultra-short reverse recovery time (15 ns, typical) facilitates high-speed switching and minimizes switching loss. The SiC diodes are ideal for PFC/power supplies, solar panel inverters, uninterruptible power supplies, air conditioners and others.
Using cutting-edge production technology the SiC MOSFETs SCH series achieve high voltage resistance, low ON resistance, and fast switching speed in a high heat dissipation package, contributing to device miniaturization and lower energy consumption for greater efficiency. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. The lineup is currently being expanded, optimized for next-generation devices.
This makes them ideal devices for a wide range of applications, including PFC (power factor correction) circuits, converters and inverters for power conversion. The MOSFETs are also suited for power converters such as those used in EV/HEV and industrial units.
As one of the global leaders in Silicon Carbide process technology, ROHM are continually expanding their range of SiC MOSFETs. These devices are driving the move towards greater energy efficiency and power handling demanded by applications.
As one of the global leaders in Silicon Carbide process technology, ROHM are continually expanding their range of SiC MOSFETs. These devices are driving the move towards greater energy efficiency and power handling demanded by applications
In recent years Silicon Carbide (SiC) has emerged as one of the most viable candidates in the search for a next-generation, low-loss power semiconductor element due to its low ON resistance and superior high temperature, high frequency.
ROHM has released a new sensor shield (expansion board) equipped with 8 sensor boards (e.g. accelerometer, barometric pressure, geomagnetic, heart rate sensors, etc.) designed for use with existing open platform MCUboards such as Arduino, and mbed.
ROHM has launched a 12 to 76V input, 3A variable output voltage, DC/DC Buck converter with integrated 76V MOSFET optimized for high power (high voltage x large current) applications such as motors, factory automation equipment, communications