ROHM Semiconductor has introduced its first isolated Gate Driver. With the new coreless transformer technology it is possible to provide a Gate Driver with isolation up to 2,500 Vrms in a small SSOP package of size 6.5 x 8.1 mm and a maximum height of around 2 mm. ROHM’s proprietary micro-fabrication technology was utilized to achieve the goal of a compact isolated Gate Driver.

As SiC MOSFETs require a higher gate voltage of approximately 18V, there was also the need to design an IC with higher Vgs. To allow flexible utilization the device is supporting a high Vgs up to 24V and a negative power supply down to -12V. The input-output delay is 400ns and many protection functions for a safe usage are integrated.

Applications for this isolated Gate Driver are all devices using SiC MOSFET or IGBT such as Inverters, DC/DC converters, and battery chargers in industrial (e.g. photovoltaic) or automotive (e.g. electrical vehicle) markets.

Some of the key features are:
* Proprietary coreless transformer technology utilized for isolated gate driver functionality
* Supports high Vgs up to 24V (required for SiC MOSFET) and negative power supplies down to -12V
* Inverters, DC/DC converters, and battery chargers
* Rated output current peak of 5A
* Propagation delay of 400ns
* Desat protection function
* Miller clamp function
* Short circuit protection incl. soft turn off (adjustable reset & turn-off time)
* Inverters, DC/DC converters, and battery chargers
* Fault signal output (adjustable output holding time)
* Shut-down with external temperature sensor possible