ROHM Semiconductor has introduced its first isolated Gate Driver. With the new coreless transformer technology it is possible to provide a Gate Driver with isolation up to 2,500 Vrms in a small SSOP package of size 6.5 x 8.1 mm and a maximum height of around 2 mm. ROHM’s proprietary micro-fabrication technology was utilized to achieve the goal of a compact isolated Gate Driver.
As SiC MOSFETs require a higher gate voltage of approximately 18V, there was also the need to design an IC with higher Vgs. To allow flexible utilization the device is supporting a high Vgs up to 24V and a negative power supply down to -12V. The input-output delay is 400ns and many protection functions for a safe usage are integrated.
Applications for this isolated Gate Driver are all devices using SiC MOSFET or IGBT such as Inverters, DC/DC converters, and battery chargers in industrial (e.g. photovoltaic) or automotive (e.g. electrical vehicle) markets. Some of the key features are: * Proprietary coreless transformer technology utilized for isolated gate driver functionality * Supports high Vgs up to 24V (required for SiC MOSFET) and negative power supplies down to -12V * Inverters, DC/DC converters, and battery chargers * Rated output current peak of 5A * Propagation delay of 400ns * Desat protection function * Miller clamp function * Short circuit protection incl. soft turn off (adjustable reset & turn-off time) * Inverters, DC/DC converters, and battery chargers * Fault signal output (adjustable output holding time) * Shut-down with external temperature sensor possible
As one of the global leaders in Silicon Carbide process technology, ROHM are continually expanding their range of SiC MOSFETs. These devices are driving the move towards greater energy efficiency and power handling demanded by applications.
As one of the global leaders in Silicon Carbide process technology, ROHM are continually expanding their range of SiC MOSFETs. These devices are driving the move towards greater energy efficiency and power handling demanded by applications
In recent years Silicon Carbide (SiC) has emerged as one of the most viable candidates in the search for a next-generation, low-loss power semiconductor element due to its low ON resistance and superior high temperature, high frequency.
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