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Introducing Silicon Carbide (SiC) MOSFETs from ROHM Semiconductor

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In recent years Silicon Carbide (SiC) has emerged as one of the most viable candidates in the search for a next-generation, low-loss power semiconductor element due to its low ON resistance and superior high temperature, high frequency, and high voltage performance when compared to silicon.

SiC (silicon carbide) is a compound semiconductor composed of silicon and carbide. SiC provides a number of advantages over silicon, including 10x the breakdown electric field strength, 3x the band gap, and enabling a wider range of p- and n-type control required for device construction. The result is breakthrough performance, not possible with silicon, making it the most viable successor for next-generation power devices.

Click here to download the ROHM SiC Device application note

 

ROHM has been at the forefront in the development of SiC power devices and modules, improving power savings in a number of applications including:

  • High-efficiency inverters in DC/AC converters for solar/wind power supplies
  • Electric/hybrid vehicles power conversion
  • Power inverters for industrial equipment and air conditioners
  • X-ray generators
  • Thin-film coating processes

 

ROHM's Development History of SiC Power Devices

The ROHM portfolio of devices include SiC Schottky barrier diodes (SBD's), SiC MOSFET's, full SiC power modules (which integrate SiC SBDs and MOSFETs), and high heat resistance power modules. These compact and efficient semiconductor devices have the potential to substantially reduce end-product size.

Click below to see how ROHM SiC MOSFETS can be used in Ultra-High Voltage Pulse generators




For SiC MOSFET devices in principle there is no tail current during switching, this results in faster operation and reduced switching losses. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. SiC devices exhibit minimal ON resistance increases and provides greater package miniaturization, and energy savings than conventional Si devices, in which the ON resistance can more than double with increased temperature.

The ROHM SCT series of SiC MOSFET devices are currently available in 650V, 1200V and 1700V Drain-source voltages with Drain currents from 3.7A to 118A and power ratings up to 427W in a TO-247N package, the family also includes devices which meet AEC-Q101 Automotive Grade.

Click here for more information or to buy from Anglia Live.

Click here to download the catalogue for ROHM SiC Power Devices

Anglia are offering customers FREE samples of the SCT series of Silicon Carbide (SiC) MOSFETs from ROHM, please fill in the form below to register for your FREE samples now.
 

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To register for FREE samples of the SCT series of Silicon Carbide (SiC) MOSFETs from ROHM, please fill in the form below

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Interested in more FREE samples for your design? Click here to try our Ezysample service.

FREE samples for UK and Ireland customers only, subject to availability.

 

 



 
Date Published :
16/07/2019
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