The latest MDmesh™ DK5 power MOSFETs from STMicroelectronics are Very High-Voltage (VHV) super-junction transistors with the extra advantage of a fast-recovery diode. This helps designers maximize the efficiency of various power-conversion topologies including LLC resonant converters with Zero-Voltage Switching (ZVS).
As super-junction MOSFETs, the new devices with voltage ratings from 950V to 1050V deliver superior switching performance with lower on-resistance RDS(ON) and higher current rating per die area compared to ordinary planar MOSFETs. They enable designers to enhance efficiency, as well as increase power density by using fewer parallel components, in converters for high-power equipment such as telecom and data-centre servers powered from high bus voltages, industrial welders, plasma generators, high-frequency induction heaters, and X-ray machines.
Featuring a fast-recovery body diode, the new devices enable higher efficiency in ZVS LLC resonant converters, which are chosen for applications that require high efficiency over a wide input-voltage range. Other types of bridged converters, as well as boost DC/DC converters for battery charging, also benefit from the reduced losses and enhanced dynamic performance of these devices.
Compared with currently available VHV fast-diode MOSFETs, the latest MDmesh™ DK5 devices from STMicroelectronics combine the best reverse-recovery time (trr) and lowest MOSFET gate charge (Qg) and RDS(ON), with the favourable output and input capacitances (Coss, Ciss) of a super-junction device.
The DK5 family extends STMicroelectronics' VHV super-junction portfolio, which includes devices from 800V to 1500V, adding six new parts in TO-247, TO-247 Long-Lead, Max247, and ISOTOP power packages featuring Drain Currents of 17A, 38A and 46A in Power Ratings from 250W to 625W.
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