The HMC1099 from Analog Devices is a gallium nitride (GaN), broadband power amplifier delivering >10 W with up to 69% power added efficiency (PAE) across an instantaneous bandwidth of 10 MHz to 1.1 GHz with a ±0.5 dB typical gain flatness.
The HMC1099 features high saturated output power (PSAT) of 40.5 dBm typical and high small signal gain of 18.5 dB typical. The device operates from a supply voltage (VDD) of 28V at 100mA.
The HMC1099 amplifier also benefits from its ability to be externally tuned using low cost, surface-mount components. The amplifier is housed in a compact 5 x 5 mm 32 lead LFCSP package and has an operating temperature range of -40°C to +85°C.
HMC1099 Pin Out
Click below to view a short video on GaN amplifiers
The HMC1099 is supported by the EV1HMC1099LP5D evaluation board. The evaluation board provides the HMC1099 in its typical application circuit, allowing easy operation using standard dc power supplies and 50 Ω RF test equipment.
Features and Benefits
The HMC1099 is ideal for pulsed or continuous wave (CW) applications, such as Extended battery operation for public mobile radios, Power amplifier stage for wireless infrastructures, Test and measurement equipment, Commercial and military radars and General-purpose transmitter amplification.
Click here to download the HMC1099 series datasheet.
Technical article covering Bandwidth demands in Satellite Communication.
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