STMicroelectronics has extended its trench-based STripFET™ F7 series of low-voltage MOSFETs with the introduction of 60V devices to enable telecom, server, and desktop-PC power supplies, as well as industrial power supplies and DC/DC converters in solar micro-inverters, to meet tough energy-efficiency specifications and maximize power density.
STripFET F7 MOSFETs combine improved conduction efficiency and switching performance with a simplified trench-gate structure, which allows very low on-resistance, capacitance, and gate charge with a superior figure of merit (RDS(ON) x Qg). In addition, the intrinsic body diode has low recovery charge, which contributes to faster switching. High avalanche ruggedness ensures robust performance under harsh electrical conditions and the low ratio of reverse-transfer capacitance to input capacitance (Crss/Ciss) increases EMI immunity.
ST’s 60V STripFET F7 MOSFETs are tailored for synchronous rectification and allow fewer parallel devices for the desired maximum current, which helps increase power density and lower the component count. The range comprises industry-standard power packages and maximum current from 90A to 260A (silicon-limited continuous drain current at Tc = 25°C). The packages supported are PowerFLAT™ 5x6, PowerFLAT 3.3x3.3, DPAK, D2PAK, TO-220, TO-220FP, and 2-lead or 6-lead H2PAK.
All devices are in mass production now.
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